Characterization of the carriers' multiplication in Si and SiC power devices by soft-gamma irradiation under cryostatic conditions

The characterization of the carriers' multiplication factor is a key issue for design robust and reliable power semiconductor devices assessment their susceptibility to terrestrial cosmic radiation induced failures. A cryostatic setup presented extend applicability non-invasive charge spectroscopy techniques using soft-gamma from an Am241 radioactive source broad class Si SiC devices. relationship provided convert measured at liquid nitrogen temperature ambient temperature. dedicated simulation scheme proposed that couples TCAD Monte Carlo tools predict spectra collected locate hotspots factor. Finally, after highlighting correlation between failure rate submitted radiation, present technique suggested as complementary method assess Safe-Operating Area.